Background: Photonic Integrated Circuits for high-temperature operation

Operating temperature is a key factor in determining both performance and practicality of laser-diodes. Temperature control tends to improve performance by reducing threshold current, improving efficiency and speed, and stabilizing output wavelength. Yet avoiding the need for cooling and temperature stabilization reduces module power requirements, cuts costs, and allows operation in a wide range of environments. Increasingly importantly, it facilitates denser photonic integration and co-integration with electronics. In the framework of a very large national photonics initiative, in this project we intend to evaluate the laser active layer design in terms of high-temperature suitability and identify the primary physical processes which are limiting the maximum operating temperatures.

Project description

The InGaAsP/InP alloys have relatively low barrier heights in the active layers, impairing charge carrier confinement, leading to a further, rapid degradation in efficiency at high temperature.  at a wavelength of 1550nm. The low numbers of quantum wells require higher carrier densities, accelerating these inefficacies. The deployment of photonic integrated circuits within electronic systems will require photonic circuits to operate well beyond 100 degrees Celsius. This will require innovations in predictive methods for accelerated lifetime estimation.

The selected candidate will perform cutting-edge applied research in material science.

Within the PSN group, the expertise in defect analysis provides state-of-the-art tools for identifying recombination centres, their origins and their impacts. Additionally, the PSN has developed an experimental environment tailored for the investigation of optical and electronic structures at the level of individual defects. Besides that, the group's excels in methods beyond the effective mass approximation, enabling band-gap engineering in systems characterized by robust spin-orbit interactions (such as InGaAlAs/InP alloys), particularly for optoelectronic application.

The projects will be supervised by dr. A. Silov at the Department of Applied Physics, in collaboration with prof. K. Wiliams, Electrical Engineering Department and companies active in photonics.

We invite applications from candidates who hold a Master's degree in physics or electrical engineering, with a background in optics or photonics. Candidates should display a keen interest in experimental physics and exhibit the drive and capacity to independently address various aspects of a problem while collaborating within a team. Previous experience with optical spectroscopy and band-gap engineering would be advantageous.

A meaningful job in a dynamic and ambitious university, in an interdisciplinary setting and within an international network. You will work on a beautiful, green campus within walking distance of the central train station. In addition, we offer you:

• Full-time employment for four years, with an intermediate evaluation (go/no-go) after nine months. You will spend 10% of your employment on teaching tasks.
• Salary and benefits (such as a pension scheme, paid pregnancy and maternity leave, partially paid parental leave) in accordance with the Collective Labour Agreement for Dutch Universities, scale P (min. €2,770 max. €3,539).
• A year-end bonus of 8.3% and annual vacation pay of 8%.
• High-quality training programs and other support to grow into a self-aware, autonomous scientific researcher. At TU/e we challenge you to take charge of your own learning process.
• An excellent technical infrastructure, on-campus children's day care and sports facilities.
• An allowance for commuting, working from home and internet costs.
• A Staff Immigration Team and a tax compensation scheme (the 30% facility) for international candidates.