Background:

Wireless communication penetrates nearly all aspects of our daily life. Whether we're streaming music while running, checking the latest news on our smartphones, or monitoring home security through IoT devices, wireless technology is there to provide connectivity with maximum mobility. Current 5G wireless utilizes a frequency band up to 71 GHz, and further scaling requires exploitation of even higher frequencies (e.g., beyond 200GHz). A new semiconductor technology for signal processing is thus demanded. One key challenge is to make good high-gain, low-noise amplifiers that operate in the 200-300 GHz frequency band.

Research goal:

The world's best low-noise amplifiers are made with InP-based high electron mobility transistors (HEMT), due to the excellent electron transport properties of the lattice-matched InGaAs material. To operate at such high frequencies, accurate epitaxy control, extra fine sub-100 nm gate length, and aggressive dielectric thickness scaling are needed. Currently, these requirements impose challenges on the mass adoption of this technology, as usually EBL is needed. At TU/e, we aim to address the problem with state-of-the-art mass manufacturing technologies. The first step involves the essential steps toward high manufacturability, utilizing our in-house ASML DUV scanner. The second stage will be an exploration of a sustained scaling path, including MOS-HEMTs with high-k dielectrics and advanced device architecture. In this project, you will be at the very core of the development of a new revolutionary semiconductor technology for future wireless. The project involves the full value chain in high-frequency devices - from epitaxy to simulation, fabrication, and characterization.

The project is part of the collaborative project with NXP and the IC group at TU Eindhoven, named 'Future Wireless Interfaces (FWITEC)'. The project is aimed beyond 5G communication technology and focuses on the application of using wireless interconnect to replace physical links. They encompass short-range inter-chip and intra-chiplet communication, in-package communication up to in-house/in-production-line line-of-sight (<10m) device-to-device communication. This is projected as a future high-volume application, with a potential B$ market value. In this project, you will be employed at the Photonic Integration group (PhI), and have the opportunity to work with experts from NXP and the IC group.

• For PhD, it is required a master's degree MSc in Electrical Engineering, or (applied) Physics.
• Knowledge of semiconductor physics.
• Experience with nanofabrication is a plus.
• Experience with III-V technology is a plus.
• A can-do attitude.
• Ability to perform teamwork in an international environment.
• Skills in programming.
• A systematic approach to problem-solving and curiosity to understand things in-depth.

A meaningful job in a dynamic and ambitious university, in an interdisciplinary setting and within an international network. You will work on a beautiful, green campus within walking distance of the central train station. In addition, we offer you:

• Full-time employment for four years, with an intermediate evaluation (go/no-go) after nine months. You will spend 10% of your employment on teaching tasks.
• Salary and benefits (such as a pension scheme, paid pregnancy and maternity leave, partially paid parental leave) in accordance with the Collective Labour Agreement for Dutch Universities, scale P (min. €2,872 max. €3,670).
• A year-end bonus of 8.3% and annual vacation pay of 8%.
• High-quality training programs and other support to grow into a self-aware, autonomous scientific researcher. At TU/e we challenge you to take charge of your own learning process.
• An excellent technical infrastructure, on-campus children's day care and sports facilities.
• An allowance for commuting, working from home and internet costs.
• A Staff Immigration Team and a tax compensation scheme (the 30% facility) for international candidates.